Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204307-FQPF11P06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 175 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
P-Channel MOSFET, -60V, -8.6A, 175mR, TO-220F Product overview: FQPF11P06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -8.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -8.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF11P06 can be used for catalog matching and distributor lookup.
P-Channel 60V 8.6A (Tc) 30W (Tc) Through Hole TO-220F-3
MOSFET P-CH 60V 8.6A TO220F
POWER FIELD-EFFECT TRANSISTOR, 8
MOSFET P-CH 60V 8.6A TO220F
MOSFET, P-CH, 60V, 8.6A, 175DEG C, 30W ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 204307-FQPF11P06 | 278-FQPF11P06 | FQPF11P06FS-ND | FQPF11P06 | FQPF11P06 | 54AH8763 | FQPF11P06 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF11P06 | P-Channel -60V -8.6A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 8.6A, 175Deg C, 30W Rohs Compliant Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 30000 milliwatts | 30000 milliwatts | 30000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
