onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF11N40C FQPF11N40C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016460-FQPF11N40C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 44W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1090pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF11N40C - 016460-FQPF11N40C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF11N40CFS-ND - DigiKey
    DigiKey
  • Transistor - 66730705 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF11N40C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016460-FQPF11N40C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 44W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1090pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF11N40C - 016460-FQPF11N40C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF11N40C
016460-FQPF11N40C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF11N40C 016460-FQPF11N40C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016460-FQPF11N40C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 44W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1090pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016460-FQPF11N40C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1090pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF11N40CFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF11N40CFS-ND
Single FETs, MOSFETs FQPF11N40CFS-ND
N-Channel 400V 10.5A (Tc) 44W (Tc) Through Hole TO-220F-3

N-Channel 400V 10.5A (Tc) 44W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Transistor - 66730705 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66730705
Transistor 66730705
TRANSISTOR,MOSFET,N- CHANNEL,400V V(BR)DSS,10.5A I(D),TO-220AB(FP) ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,10.5A I(D),TO-220AB(FP) ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF11N40C
MOSFET FQPF11N40C
MOSFET 400V N-Channel Advance Q-FET

MOSFET 400V N-Channel Advance Q-FET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF11N40C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF11N40C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF11N40C
MOSFET N-CH 400V 10.5A TO220F

MOSFET N-CH 400V 10.5A TO220F

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016460-FQPF11N40C FQPF11N40CFS-ND 66730705 FQPF11N40C FQPF11N40C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF11N40C Single FETs, MOSFETs Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 400 volts
PD 44000 milliwatts
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