N-Channel 200V 9.5A (Tc) 38W (Tc) Through Hole TO-220F-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001236-FQPF10N20C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 4.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFETs 200V N-Ch MOSFET Product overview: FQPF10N20C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF10N20C can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 9.5A TO220F
MOSFET N-CH 200V 9.5A TO220F
MOSFET, N-CH, 200V, 9.5A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQPF10N20CFS-ND | 001236-FQPF10N20C | 1454532 | 2088-FQPF10N20C | FQPF10N20C | FQPF10N20C | FQPF10N20C | 31Y1535 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF10N20C | MOSFETs | 200V MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 9.5A, To-220F-3; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220F | TO-220; To-220f | Tube | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |
| V(BR)DSS | 200 volts | 200 volts | ||||||
| PD | 38000 milliwatts | 38 milliwatts | 38000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
