onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF10N20C FQPF10N20C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001236-FQPF10N20C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 4.75A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001236-FQPF10N20C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 4.75A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF10N20C - 001236-FQPF10N20C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF10N20C
001236-FQPF10N20C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF10N20C 001236-FQPF10N20C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001236-FQPF10N20C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 4.75A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001236-FQPF10N20C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 4.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
MOSFETs - 1454532 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1454532
MOSFETs 1454532
MOSFET N-Channel 200V 9.5A TO220F

MOSFET N-Channel 200V 9.5A TO220F

Supplier's Site
Single FETs, MOSFETs - FQPF10N20CFS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF10N20CFS-ND
Single FETs, MOSFETs FQPF10N20CFS-ND
N-Channel 200V 9.5A (Tc) 38W (Tc) Through Hole TO-220F-3

N-Channel 200V 9.5A (Tc) 38W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Singapore, Singapore
200V MOSFET Transistor
2088-FQPF10N20C
200V MOSFET Transistor 2088-FQPF10N20C
MOSFETs 200V N-Ch MOSFET Product overview: FQPF10N20C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF10N20C can be used for catalog matching and distributor lookup.

MOSFETs 200V N-Ch MOSFET Product overview: FQPF10N20C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF10N20C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 200V, 9.5A, To-220F-3; Channel Type Onsemi - 31Y1535 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 9.5A, To-220F-3; Channel Type Onsemi
31Y1535
Mosfet, N-Ch, 200V, 9.5A, To-220F-3; Channel Type Onsemi 31Y1535
MOSFET, N-CH, 200V, 9.5A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 200V, 9.5A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF10N20C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF10N20C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF10N20C
MOSFET N-CH 200V 9.5A TO220F

MOSFET N-CH 200V 9.5A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V N-Ch MOSFET

MOSFET 200V N-Ch MOSFET

Buy Now Datasheet
Single FETs, MOSFETs - FQPF10N20C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF10N20C
Single FETs, MOSFETs FQPF10N20C
MOSFET N-CH 200V 9.5A TO220F

MOSFET N-CH 200V 9.5A TO220F

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001236-FQPF10N20C 1454532 FQPF10N20CFS-ND 2088-FQPF10N20C 31Y1535 FQPF10N20C FQPF10N20C FQPF10N20C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF10N20C MOSFETs Single FETs, MOSFETs 200V MOSFET Transistor Mosfet, N-Ch, 200V, 9.5A, To-220F-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 38000 milliwatts 38 milliwatts 38000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220F TO-220; To-220f TO-220; TO-220-3 Full Pack Tube TO-3; TO-220 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
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