onsemi Single FETs, MOSFETs FQP9N90C

Description
N-Channel 900V 8A (Tc) 205W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 900V 8A (Tc) 205W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP9N90COS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP9N90COS-ND
Single FETs, MOSFETs FQP9N90COS-ND
N-Channel 900V 8A (Tc) 205W (Tc) Through Hole TO-220-3

N-Channel 900V 8A (Tc) 205W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N90C - 1175459-FQP9N90C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N90C
1175459-FQP9N90C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N90C 1175459-FQP9N90C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175459-FQP9N90C Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: FQP9N90C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 900V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2730pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 205W (Tc) Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 4A, 10V Alternative Parts (Cross-Reference): TSM9N90CZ C0; STP6NC90Z; STP13N95K3; Introduction Date: September 30, 2003 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175459-FQP9N90C
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Family Name: FQP9N90C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 900V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2730pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 205W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
Alternative Parts (Cross-Reference): TSM9N90CZ C0; STP6NC90Z; STP13N95K3;
Introduction Date: September 30, 2003
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP9N90C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP9N90C
Single FETs, MOSFETs FQP9N90C
MOSFET N-CH 900V 8A TO220-3

MOSFET N-CH 900V 8A TO220-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FQP9N90C
MOSFET FQP9N90C
MOSFET 900V N-Channel Adv Q-FET C-Series

MOSFET 900V N-Channel Adv Q-FET C-Series

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP9N90C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP9N90C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP9N90C
MOSFET N-CH 900V 8A TO220-3

MOSFET N-CH 900V 8A TO220-3

Supplier's Site
N Channel Mosfet, 900V, 8A, To-220; Channel Type Onsemi - 60J0874 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 900V, 8A, To-220; Channel Type Onsemi
60J0874
N Channel Mosfet, 900V, 8A, To-220; Channel Type Onsemi 60J0874
N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET 900V N-Channel Adv Q-FET C-Series - 598-FQP9N90C - Utmel Electronic Limited
Hong Kong, China
MOSFET 900V N-Channel Adv Q-FET C-Series
598-FQP9N90C
MOSFET 900V N-Channel Adv Q-FET C-Series 598-FQP9N90C
MOSFET 900V N-Channel Adv Q-FET C-Series

MOSFET 900V N-Channel Adv Q-FET C-Series

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQP9N90COS-ND 1175459-FQP9N90C FQP9N90C FQP9N90C FQP9N90C 60J0874 598-FQP9N90C
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N90C Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 900V, 8A, To-220; Channel Type Onsemi MOSFET 900V N-Channel Adv Q-FET C-Series
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
PD 205000 milliwatts 205000 milliwatts 205000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tube; Tube Tube; Tube Tube; Tube
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