onsemi Single FETs, MOSFETs FQP9N90C

N-Channel 900V 8A (Tc) 205W (Tc) Through Hole TO-220-3

MOSFETs 900V N-Channel Adv Q-FET C-Series Product overview: FQP9N90C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP9N90C can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175459-FQP9N90C
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Family Name: FQP9N90C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 900V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2730pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 205W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
Alternative Parts (Cross-Reference): TSM9N90CZ C0; STP6NC90Z; STP13N95K3;
Introduction Date: September 30, 2003
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

MOSFET N-CH 900V 8A TO220-3