onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N08L FQP9N08L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039888-FQP9N08L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 9.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 210 mOhm @ 4.65A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039888-FQP9N08L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 9.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 210 mOhm @ 4.65A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N08L - 1039888-FQP9N08L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N08L
1039888-FQP9N08L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N08L 1039888-FQP9N08L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039888-FQP9N08L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 9.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 210 mOhm @ 4.65A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039888-FQP9N08L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 9.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 210 mOhm @ 4.65A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FQP9N08L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP9N08L-ND
Single FETs, MOSFETs FQP9N08L-ND
N-Channel 80V 9.3A (Tc) 40W (Tc) Through Hole TO-220-3

N-Channel 80V 9.3A (Tc) 40W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP9N08L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP9N08L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP9N08L
MOSFET N-CH 80V 9.3A TO220-3

MOSFET N-CH 80V 9.3A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1039888-FQP9N08L FQP9N08L-ND FQP9N08L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP9N08L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 80 volts
PD 40000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor - QPD1013 - Qorvo
Specs
Transistor Technology / Material DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type DFN
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N3904TF - 854966-2N3904TF - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
MOSFET - AUIRF2805STRL - VAST STOCK CO., LIMITED
Infineon Technologies AG
View Details
2 suppliers