MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:65W; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 14J0096 |
| Product Name | Mosfet, P, To-220; Channel Type Onsemi |
| IDSS | 8000 milliamps |