P-Channel 100V 8A (Tc) 65W (Tc) Through Hole TO-220-3
MOSFET P-CH 100V 8A TO220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067445-FQP8P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 530 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
P-Channel MOSFET, -100V, -8A, 530mR, TO-220 Product overview: FQP8P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -100V, -8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -8A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP8P10 can be used for catalog matching and distributor lookup.
MOSFET, P-CH, 100V, 8A, 65W; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.41ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:-; No. of Pins:3PinsRoHS Compliant: Yes
MOSFET P-CH 100V 8A TO220-3
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP8P10FS-ND | FQP8P10 | 067445-FQP8P10 | 278-FQP8P10 | 82C4360 | FQP8P10 | FQP8P10 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP8P10 | P-Channel -100V -8A TO-220 MOSFET Transistor | Mosfet, P-Ch, 100V, 8A, 65W; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-3 | TO-220; TO-220-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 8000 milliamps | 8000 milliamps |
