onsemi Mosfet, N, To-220; Channel Type Onsemi FQP8N60C.

The FQP8N60C is an N-channel MOSFET designed for high-efficiency switched-mode power supplies and active power factor correction. It is packaged in a TO-220 case with a maximum drain-source voltage of 600 V and a continuous drain current of 7.5 A at 25°C case temperature. The maximum on-state resistance is 1.2 Ω at 10 V gate-source voltage and 3.75 A drain current. The device has a typical gate charge of 28 nC, reverse transfer capacitance of 12 pF, and is 100% avalanche tested with a single-pulsed avalanche energy rating of 230 mJ. Thermal resistance from junction to case is 0.85 °C/W, and the operating and storage temperature range is -55°C to +150°C. The package meets UL 94 V-0 flammability requirements and is RoHS compliant.