onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7P06 FQP7P06

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039882-FQP7P06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 410 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039882-FQP7P06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 410 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7P06 - 1039882-FQP7P06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7P06
1039882-FQP7P06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7P06 1039882-FQP7P06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039882-FQP7P06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 410 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039882-FQP7P06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 295pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 410 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP7P06-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP7P06-ND
Single FETs, MOSFETs FQP7P06-ND
P-Channel 60V 7A (Tc) 45W (Tc) Through Hole TO-220-3

P-Channel 60V 7A (Tc) 45W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP7P06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP7P06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP7P06
MOSFET P-CH 60V 7A TO220-3

MOSFET P-CH 60V 7A TO220-3

Supplier's Site
Mosfet, P, To-220; Channel Type Onsemi - 97K0196 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P, To-220; Channel Type Onsemi
97K0196
Mosfet, P, To-220; Channel Type Onsemi 97K0196
MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:45W; MSL:- RoHS Compliant: Yes

MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:45W; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP7P06
MOSFET FQP7P06
MOSFET 60V P-Channel QFET

MOSFET 60V P-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039882-FQP7P06 FQP7P06-ND FQP7P06 97K0196 FQP7P06
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7P06 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P, To-220; Channel Type Onsemi MOSFET
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts
PD 45000 milliwatts 45000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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