onsemi Single FETs, MOSFETs FQP7N80C

POWER FIELD-EFFECT TRANSISTOR, 6

MOSFET N-CH 800V 6.6A TO220-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016459-FQP7N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

N-Channel 800V 6.6A (Tc) 167W (Tc) Through Hole TO-220-3

800V N-Channel MOSFET, 7A, 1.9Ω, TO-220 Product overview: FQP7N80C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 7A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 7A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP7N80C can be used for catalog matching and distributor lookup.