N-Channel 800V 6.6A (Tc) 167W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016459-FQP7N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
POWER FIELD-EFFECT TRANSISTOR, 6
MOSFET N-CH 800V 6.6A TO220-3
MOSFET 800V N-Ch Q-FET advance C-Series
MOSFET N-CH 800V 6.6A TO220-3
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQP7N80C-ND | 016459-FQP7N80C | FQP7N80C | FQP7N80C | FQP7N80C |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7N80C | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| V(BR)DSS | 800 volts | 800 volts | |||
| PD | 167000 milliwatts | 167000 milliwatts |
