onsemi Single FETs, MOSFETs FQP7N20

Description
N-Channel 200V 6.6A (Tc) 63W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 200V 6.6A (Tc) 63W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP7N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP7N20-ND
Single FETs, MOSFETs FQP7N20-ND
N-Channel 200V 6.6A (Tc) 63W (Tc) Through Hole TO-220-3

N-Channel 200V 6.6A (Tc) 63W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7N20 - 1039876-FQP7N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7N20
1039876-FQP7N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7N20 1039876-FQP7N20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039876-FQP7N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: FQP7N20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 690 mOhm @ 3.3A, 10V Alternative Parts (Cross-Reference): IRF620LPBF ; IRF620; IRF630; Introduction Date: May 16, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039876-FQP7N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Family Name: FQP7N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 690 mOhm @ 3.3A, 10V
Alternative Parts (Cross-Reference): IRF620LPBF ; IRF620; IRF630;
Introduction Date: May 16, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Commercial

Buy Now Datasheet
Singapore
N-Channel 200 V 6.6 A TO-220 MOSFET Transistor
278-FQP7N20
N-Channel 200 V 6.6 A TO-220 MOSFET Transistor 278-FQP7N20
Power MOSFET, N-Channel, QFET®, 200 V, 6.6 A, 0.69 Ω, TO-220, 1000-TUBE Product overview: FQP7N20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200 V, 6.6 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200 V, 6.6 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP7N20 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, QFET®, 200 V, 6.6 A, 0.69 Ω, TO-220, 1000-TUBE Product overview: FQP7N20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200 V, 6.6 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200 V, 6.6 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP7N20 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FQP7N20
MOSFET FQP7N20
MOSFET 200V N-Channel QFET

MOSFET 200V N-Channel QFET

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP7N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP7N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP7N20
MOSFET N-CH 200V 6.6A TO220-3

MOSFET N-CH 200V 6.6A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP7N20-ND 1039876-FQP7N20 278-FQP7N20 FQP7N20 FQP7N20
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP7N20 N-Channel 200 V 6.6 A TO-220 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 200 volts
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