onsemi Single FETs, MOSFETs FQP6P25

Description
P-Channel 250V 6A (Tc) 90W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
P-Channel 250V 6A (Tc) 90W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP6P25-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP6P25-ND
Single FETs, MOSFETs FQP6P25-ND
P-Channel 250V 6A (Tc) 90W (Tc) Through Hole TO-220-3

P-Channel 250V 6A (Tc) 90W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6P25 - 1039873-FQP6P25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6P25
1039873-FQP6P25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6P25 1039873-FQP6P25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039873-FQP6P25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039873-FQP6P25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.1 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP6P25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP6P25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP6P25
MOSFET P-CH 250V 6A TO220-3

MOSFET P-CH 250V 6A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP6P25-ND 1039873-FQP6P25 FQP6P25
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6P25 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 250 volts
Unlock Full Specs
to access all available technical data