MOSFET N-CH 900V 6A TO220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067442-FQP6N90C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1770pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.3 Ohm @ 3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
900V N-Channel Power MOSFET, 6A, 2.3 Ohm, TO-220 Product overview: FQP6N90C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 6A, 2.3 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6A, 2.3 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP6N90C can be used for catalog matching and distributor lookup.
N-Channel 900V 6A (Tc) 167W (Tc) Through Hole TO-220-3
DISCONTINUED BY MANUFACTURER, MOSFET, N CHANNEL, 900V, 6 AMP (TC), 1.93OHM, TO-220-3, RDS(ON) TEST VOLTAGE VGS: 10V, THRESHOLD VOLTAGE VGS: 5V, THROUGH HOLE, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 900V 6A TO220-3
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| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP6N90C | 067442-FQP6N90C | 278-FQP6N90C | FQP6N90C-ND | 16125740 | FQP6N90C | FQP6N90C |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N90C | N-Channel 900V 6A 2.3 Ohm MOSFET Transistor | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 900 volts | 900 volts | |||||
| IDSS | 6000 milliamps |
