Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016458-FQP6N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 158W (Tc)
Family Name: FQP6N80C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1310pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2.75A, 10V
Alternative Parts (Cross-Reference): STP4NA80; STP4NC80Z; TSM4N80CZ C0G;
Introduction Date: June 12, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs
MOSFET N-CH 800V 5.5A TO220-3
N-Channel 800V 5.5A (Tc) 158W (Tc) Through Hole TO-220-3
MOSFET N-Channel 800V 5.5A TO220AB
MOSFET N-Channel 800V 5.5A TO220AB
MOSFETs 800V N-Ch Q-FET advance C-Series Product overview: FQP6N80C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP6N80C can be used for catalog matching and distributor lookup.
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:158W RoHS Compliant: Yes
MOSFET 800V N-Ch Q-FET advance C-Series
MOSFET N-CH 800V 5.5A TO220-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016458-FQP6N80C | FQP6N80C | FQP6N80C-ND | 6715161 | 2088-FQP6N80C | 97K0191 | FQP6N80C | FQP6N80C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N80C | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | 800V MOSFET Transistor | Mosfet, N, To-220; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 800 volts | 800 volts | ||||||
| PD | 158000 milliwatts | 158000 milliwatts | 158 milliwatts | 158000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220ab | Tube | TO-3; TO-220 | TO-220; TO-220-3 |
