onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N50 FQP6N50

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001234-FQP6N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 98W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 790pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001234-FQP6N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 98W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 790pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N50 - 001234-FQP6N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N50
001234-FQP6N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N50 001234-FQP6N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001234-FQP6N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 98W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 790pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001234-FQP6N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 98W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 790pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FQP6N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP6N50-ND
Single FETs, MOSFETs FQP6N50-ND
N-Channel 500V 5.5A (Tc) 98W (Tc) Through Hole TO-220-3

N-Channel 500V 5.5A (Tc) 98W (Tc) Through Hole TO-220-3

Buy Now Datasheet
MOSFET N-CH 500V 5.5A TO-220 - 598-FQP6N50 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 5.5A TO-220
598-FQP6N50
MOSFET N-CH 500V 5.5A TO-220 598-FQP6N50
MOSFET N-CH 500V 5.5A TO-220

MOSFET N-CH 500V 5.5A TO-220

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP6N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP6N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP6N50
MOSFET N-CH 500V 5.5A TO220-3

MOSFET N-CH 500V 5.5A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 001234-FQP6N50 FQP6N50-ND 598-FQP6N50 FQP6N50
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N50 Single FETs, MOSFETs MOSFET N-CH 500V 5.5A TO-220 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 98000 milliwatts 98000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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