N-Channel MOSFET, 60V, 65A, 16mR, TO-220 Product overview: FQP65N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 65A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 65A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP65N06 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067440-FQP65N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2410pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 16 mOhm @ 32.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 60V 65A (Tc) 150W (Tc) Through Hole TO-220-3
MOSFET N-CH 60V 65A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 6
MOSFET N-CH 60V 65A TO220-3
N CHANNEL MOSFET, 60V, 65A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:65A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 65 A, 60 V, 16 mohm, 10 V, 4 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FQP65N06 | 067440-FQP65N06 | FQP65N06FS-ND | FQP65N06 | FQP65N06 | FQP65N06 | 18C6575 | 97K0193 |
| Product Name | N-Channel 60V 65A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP65N06 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 65A, To-220; Transistor Polarity Onsemi | Mosfet Transistor, N Channel, 65 A, 60 V, 16 Mohm, 10 V, 4 V Rohs Compliant Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-3 |
