onsemi Single FETs, MOSFETs FQP630TSTU

Description
N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

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Single FETs, MOSFETs - FQP630TSTU-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP630TSTU-ND
Single FETs, MOSFETs FQP630TSTU-ND
N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3

N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP630TSTU - 067439-FQP630TSTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP630TSTU
067439-FQP630TSTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP630TSTU 067439-FQP630TSTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067439-FQP630TSTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067439-FQP630TSTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP630TSTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP630TSTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP630TSTU
MOSFET N-CH 200V 9A TO220-3

MOSFET N-CH 200V 9A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP630TSTU-ND 067439-FQP630TSTU FQP630TSTU
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP630TSTU Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 200 volts
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