onsemi FETs - Single - FQP630 FQP630

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175443-FQP630 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 78W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175443-FQP630 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 78W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQP630 - 1175443-FQP630 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQP630
1175443-FQP630
FETs - Single - FQP630 1175443-FQP630
Manufacturer: ON Semiconductor Win Source Part Number: 1175443-FQP630 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 78W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175443-FQP630
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 78W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V

Buy Now
Single FETs, MOSFETs - FQP630-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP630-ND
Single FETs, MOSFETs FQP630-ND
N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3

N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP630 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP630
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP630
MOSFET N-CH 200V 9A TO220-3

MOSFET N-CH 200V 9A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1175443-FQP630 FQP630-ND FQP630
Product Name FETs - Single - FQP630 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 78000 milliwatts
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