Manufacturer: ON Semiconductor
Win Source Part Number: 1175443-FQP630
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 78W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V
N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3
MOSFET N-CH 200V 9A TO220-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1175443-FQP630 | FQP630-ND | FQP630 |
| Product Name | FETs - Single - FQP630 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 200 volts | ||
| PD | 78000 milliwatts |
