onsemi FETs - Single - FQP630 FQP630

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175443-FQP630 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 78W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175443-FQP630 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 78W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQP630 - 1175443-FQP630 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQP630
1175443-FQP630
FETs - Single - FQP630 1175443-FQP630
Manufacturer: ON Semiconductor Win Source Part Number: 1175443-FQP630 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 78W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175443-FQP630
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 78W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 400mOhm at 4.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 25V

Buy Now
Single FETs, MOSFETs - FQP630-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP630-ND
Single FETs, MOSFETs FQP630-ND
N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3

N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
200V 9A TO220 MOSFET Transistor
278-FQP630
200V 9A TO220 MOSFET Transistor 278-FQP630
MOSFET N-CH 200V 9A TO220-3 Product overview: FQP630 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP630 can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 9A TO220-3 Product overview: FQP630 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP630 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP630 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP630
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP630
MOSFET N-CH 200V 9A TO220-3

MOSFET N-CH 200V 9A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1175443-FQP630 FQP630-ND 278-FQP630 FQP630
Product Name FETs - Single - FQP630 Single FETs, MOSFETs 200V 9A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 78000 milliwatts 78000 milliwatts
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