onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP5N60C FQP5N60C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067437-FQP5N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2.25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Lighting Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP5N60C - 067437-FQP5N60C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP5N60C-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 600V, 4.5A To-220; Channel Type Onsemi - 84H4779 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP5N60C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16125728 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067437-FQP5N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2.25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Lighting Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP5N60C - 067437-FQP5N60C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP5N60C
067437-FQP5N60C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP5N60C 067437-FQP5N60C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067437-FQP5N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2.25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Lighting Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067437-FQP5N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2.25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Lighting
Quantity per package: 1k pcs

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 4.5A TO-220 MOSFET Transistor
278-FQP5N60C
N-Channel 600V 4.5A TO-220 MOSFET Transistor 278-FQP5N60C
600V N-Channel MOSFET, 4.5A, 2.5R, TO-220 Product overview: FQP5N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 4.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP5N60C can be used for catalog matching and distributor lookup.

600V N-Channel MOSFET, 4.5A, 2.5R, TO-220 Product overview: FQP5N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 4.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP5N60C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP5N60C-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP5N60C-ND
Single FETs, MOSFETs FQP5N60C-ND
N-Channel 600V 4.5A (Tc) 100W (Tc) Through Hole TO-220-3

N-Channel 600V 4.5A (Tc) 100W (Tc) Through Hole TO-220-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP5N60C
MOSFET FQP5N60C
MOSFET 600V N-Ch Q-FET advance C-Series

MOSFET 600V N-Ch Q-FET advance C-Series

Buy Now Datasheet
N Channel Mosfet, 600V, 4.5A To-220; Channel Type Onsemi - 84H4779 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 4.5A To-220; Channel Type Onsemi
84H4779
N Channel Mosfet, 600V, 4.5A To-220; Channel Type Onsemi 84H4779
N CHANNEL MOSFET, 600V, 4.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 4.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP5N60C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP5N60C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP5N60C
MOSFET N-CH 600V 4.5A TO220-3

MOSFET N-CH 600V 4.5A TO220-3

Supplier's Site
Transistor - 16125728 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16125728
Transistor 16125728
POWER MOSFET, N CHANNEL, 4.5 A, 600 V, 2 OHM, 10 V, 4 V, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 4.5 A, 600 V, 2 OHM, 10 V, 4 V, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 067437-FQP5N60C 278-FQP5N60C FQP5N60C-ND FQP5N60C 84H4779 FQP5N60C 16125728
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP5N60C N-Channel 600V 4.5A TO-220 MOSFET Transistor Single FETs, MOSFETs MOSFET N Channel Mosfet, 600V, 4.5A To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 100000 milliwatts 100000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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