onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP55N10 FQP55N10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067435-FQP55N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 155W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 26 mOhm @ 27.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP55N10 - 067435-FQP55N10 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP55N10-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQP55N10 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP55N10 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 100V, 55A, 175Deg C, 155W Rohs Compliant Onsemi - 54AH8775 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067435-FQP55N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 155W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 26 mOhm @ 27.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP55N10 - 067435-FQP55N10 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP55N10
067435-FQP55N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP55N10 067435-FQP55N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067435-FQP55N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 155W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 26 mOhm @ 27.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067435-FQP55N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 155W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 2730pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 26 mOhm @ 27.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
Quantity per package: 1k pcs

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 100V MOSFET Transistor
2088-FQP55N10
N-Channel 100V MOSFET Transistor 2088-FQP55N10
MOSFETs 100V N-Channel QFET Product overview: FQP55N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP55N10 can be used for catalog matching and distributor lookup.

MOSFETs 100V N-Channel QFET Product overview: FQP55N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP55N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP55N10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP55N10-ND
Single FETs, MOSFETs FQP55N10-ND
N-Channel 100V 55A (Tc) 155W (Tc) Through Hole TO-220-3

N-Channel 100V 55A (Tc) 155W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FQP55N10 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP55N10
Single FETs, MOSFETs FQP55N10
MOSFET N-CH 100V 55A TO220-3

MOSFET N-CH 100V 55A TO220-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP55N10 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP55N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP55N10
MOSFET N-CH 100V 55A TO220-3

MOSFET N-CH 100V 55A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP55N10
MOSFET FQP55N10
MOSFET 100V N-Channel QFET

MOSFET 100V N-Channel QFET

Buy Now Datasheet
Mosfet, N-Ch, 100V, 55A, 175Deg C, 155W Rohs Compliant Onsemi - 54AH8775 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 55A, 175Deg C, 155W Rohs Compliant Onsemi
54AH8775
Mosfet, N-Ch, 100V, 55A, 175Deg C, 155W Rohs Compliant Onsemi 54AH8775
MOSFET, N-CH, 100V, 55A, 175DEG C, 155W ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 55A, 175DEG C, 155W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067435-FQP55N10 2088-FQP55N10 FQP55N10-ND FQP55N10 FQP55N10 FQP55N10 54AH8775
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP55N10 N-Channel 100V MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 100V, 55A, 175Deg C, 155W Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
PD 155000 milliwatts 155 milliwatts 155000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3
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