N-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 006300-FQP50N06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 121W (Tc)
Family Name: FQP50N06L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 52.4A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 5V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 26.2A, 10V
Alternative Parts (Cross-Reference): STP55NE06; 50N06G-TA3-T; IRFZ44E;
Introduction Date: April 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 60V 52.4A TO220-3
MOSFET N-CH 60V 52.4A TO220-3
MOSFET, N; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:121W; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V RoHS Compliant: Yes
MOSFET 60V N-Channel QFET Logic Level
TRANSISTOR, 52.4A I(D), 60V, 0.025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQP50N06L-ND | 006300-FQP50N06L | FQP50N06L | FQP50N06L | 38C7278 | 47T5069 | FQP50N06L | 16125720 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06L | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N; Channel Type Onsemi | Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi | MOSFET | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-3 | ||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 121000 milliwatts | 121000 milliwatts | 121000 milliwatts |
