onsemi Single FETs, MOSFETs FQP50N06L

Description
MOSFET N-CH 60V 52.4A TO220-3
  • Single FETs, MOSFETs - FQP50N06L - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQP50N06L-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06L - 006300-FQP50N06L - Win Source Electronics
    Win Source Electronics
  • Mosfet, N; Channel Type Onsemi - 38C7278 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 47T5069 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor - 16125720 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP50N06L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 60V 52.4A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP50N06L - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP50N06L
Single FETs, MOSFETs FQP50N06L
MOSFET N-CH 60V 52.4A TO220-3

MOSFET N-CH 60V 52.4A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP50N06L-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP50N06L-ND
Single FETs, MOSFETs FQP50N06L-ND
N-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO-220-3

N-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06L - 006300-FQP50N06L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06L
006300-FQP50N06L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06L 006300-FQP50N06L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 006300-FQP50N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 121W (Tc) Family Name: FQP50N06L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 52.4A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 32nC @ 5V Max Input Capacitance: 1630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 26.2A, 10V Alternative Parts (Cross-Reference): STP55NE06; 50N06G-TA3-T; IRFZ44E; Introduction Date: April 01, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 006300-FQP50N06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 121W (Tc)
Family Name: FQP50N06L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 52.4A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 5V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 26.2A, 10V
Alternative Parts (Cross-Reference): STP55NE06; 50N06G-TA3-T; IRFZ44E;
Introduction Date: April 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Mosfet, N; Channel Type Onsemi - 38C7278 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N; Channel Type Onsemi
38C7278
Mosfet, N; Channel Type Onsemi 38C7278
MOSFET, N; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:121W; MSL:- RoHS Compliant: Yes

MOSFET, N; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:52A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:121W; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 47T5069 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi
47T5069
Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi 47T5069
MOSFET Transistor, N Channel, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 16125720 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16125720
Transistor 16125720
TRANSISTOR, 52.4A I(D), 60V, 0.025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, 52.4A I(D), 60V, 0.025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP50N06L
MOSFET FQP50N06L
MOSFET 60V N-Channel QFET Logic Level

MOSFET 60V N-Channel QFET Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP50N06L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP50N06L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP50N06L
MOSFET N-CH 60V 52.4A TO220-3

MOSFET N-CH 60V 52.4A TO220-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP50N06L FQP50N06L-ND 006300-FQP50N06L 38C7278 47T5069 16125720 FQP50N06L FQP50N06L
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06L Mosfet, N; Channel Type Onsemi Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 52400 milliamps 52000 milliamps
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