Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016457-FQP50N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1540pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Automotive
Quantity per package: 1k pcs
N-Channel MOSFET, 60V, 50A, 22mR, TO-220 Product overview: FQP50N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 50A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP50N06 can be used for catalog matching and distributor lookup.
N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3
MOSFET N-CH 60V 50A TO220-3
N CHANNEL MOSFET, 60V, 50A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 60V 50A TO220-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016457-FQP50N06 | 278-FQP50N06 | FQP50N06FS-ND | FQP50N06 | FQP50N06 | 58K1528 | FQP50N06 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 | N-Channel 60V 50A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 120000 milliwatts | 120000 milliwatts | 120000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
