onsemi Single FETs, MOSFETs FQP50N06

Description
MOSFET N-CH 60V 50A TO220-3
  • Single FETs, MOSFETs - FQP50N06 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 - 016457-FQP50N06 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP50N06FS-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi - 58K1528 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP50N06 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 60V 50A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP50N06 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP50N06
Single FETs, MOSFETs FQP50N06
MOSFET N-CH 60V 50A TO220-3

MOSFET N-CH 60V 50A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 - 016457-FQP50N06 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06
016457-FQP50N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 016457-FQP50N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016457-FQP50N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1540pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Automotive Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016457-FQP50N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1540pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Automotive
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP50N06FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP50N06FS-ND
Single FETs, MOSFETs FQP50N06FS-ND
N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3

N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3

Buy Now Datasheet
N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi - 58K1528 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi
58K1528
N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi 58K1528
N CHANNEL MOSFET, 60V, 50A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 50A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP50N06 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP50N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP50N06
MOSFET N-CH 60V 50A TO220-3

MOSFET N-CH 60V 50A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP50N06
MOSFET FQP50N06
MOSFET TO-220 N-CH 60V 50A

MOSFET TO-220 N-CH 60V 50A

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQP50N06 016457-FQP50N06 FQP50N06FS-ND 58K1528 FQP50N06 FQP50N06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 Single FETs, MOSFETs N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 50000 milliamps 50000 milliamps
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