onsemi Single FETs, MOSFETs FQP50N06

Description
N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - FQP50N06FS-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQP50N06 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 - 016457-FQP50N06 - Win Source Electronics
    Win Source Electronics
  • N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi - 58K1528 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP50N06 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP50N06FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP50N06FS-ND
Single FETs, MOSFETs FQP50N06FS-ND
N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3

N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FQP50N06 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP50N06
Single FETs, MOSFETs FQP50N06
MOSFET N-CH 60V 50A TO220-3

MOSFET N-CH 60V 50A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 - 016457-FQP50N06 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06
016457-FQP50N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 016457-FQP50N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016457-FQP50N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1540pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Automotive Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016457-FQP50N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1540pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Automotive
Quantity per package: 1k pcs

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP50N06
MOSFET FQP50N06
MOSFET TO-220 N-CH 60V 50A

MOSFET TO-220 N-CH 60V 50A

Buy Now Datasheet
N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi - 58K1528 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi
58K1528
N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi 58K1528
N CHANNEL MOSFET, 60V, 50A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 50A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP50N06 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP50N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP50N06
MOSFET N-CH 60V 50A TO220-3

MOSFET N-CH 60V 50A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP50N06FS-ND FQP50N06 016457-FQP50N06 FQP50N06 58K1528 FQP50N06
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP50N06 MOSFET N Channel Mosfet, 60V, 50A, To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
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