The FQP50N06 is an N-channel MOSFET designed for low-voltage switching applications such as automotive systems and DC/DC converters. It is packaged in a TO-220 case with a maximum junction temperature rating of 175°C. The device has a drain-source voltage of 60 V, a continuous drain current of 50 A at 25°C, and an on-state resistance of 0.022 Ω at a gate-source voltage of 10 V. It features a total gate charge of 31 nC, a reverse transfer capacitance of 65 pF, and is 100% avalanche tested. The MOSFET meets RoHS requirements and is rated for operating and storage temperatures from -55°C to +175°C.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:120W; RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 97K0188 |
| Product Name | Mosfet, N, To-220; Transistor Polarity Onsemi |
| IDSS | 50000 milliamps |
