onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4P40 FQP4P40

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204302-FQP4P40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 85W (Tc) Family Name: FQP4P40 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.1 Ohm @ 1.75A, 10V Introduction Date: September 19, 2000 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204302-FQP4P40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 85W (Tc) Family Name: FQP4P40 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.1 Ohm @ 1.75A, 10V Introduction Date: September 19, 2000 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
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Datasheet
Datasheet Summary
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The FQP4P40 is a P-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V(Br)Dss) of -400V and a continuous drain current (I(D)) rating of -3.5A at a case temperature of 25¬8C. The device is housed in a TO-220 package and is RoHS compliant. It exhibits a maximum on-resistance (RDS(on)) of 3.1,Ѷ at a gate-source voltage (VGS) of -10V and a drain current of -1.75A. The MOSFET is suitable for various applications, including switched mode power supplies, audio amplifiers, and DC motor control. It has a low gate charge of approximately 18nC and is 100% avalanche tested, ensuring reliability in demanding conditions. The operating temperature range is from -55¬8C to +150¬8C, making it versatile for different environments.

Datasheet Summary
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The FQP4P40 is a P-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V(Br)Dss) of -400V and a continuous drain current (I(D)) rating of -3.5A at a case temperature of 25¬8C. The device is housed in a TO-220 package and is RoHS compliant. It exhibits a maximum on-resistance (RDS(on)) of 3.1,Ѷ at a gate-source voltage (VGS) of -10V and a drain current of -1.75A. The MOSFET is suitable for various applications, including switched mode power supplies, audio amplifiers, and DC motor control. It has a low gate charge of approximately 18nC and is 100% avalanche tested, ensuring reliability in demanding conditions. The operating temperature range is from -55¬8C to +150¬8C, making it versatile for different environments.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4P40 - 204302-FQP4P40 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4P40
204302-FQP4P40
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4P40 204302-FQP4P40
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204302-FQP4P40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 85W (Tc) Family Name: FQP4P40 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.1 Ohm @ 1.75A, 10V Introduction Date: September 19, 2000 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204302-FQP4P40
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 85W (Tc)
Family Name: FQP4P40
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.1 Ohm @ 1.75A, 10V
Introduction Date: September 19, 2000
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore, Singapore
P-Channel -400V -3.5A 3.1 Ohm MOSFET Transistor
278-FQP4P40
P-Channel -400V -3.5A 3.1 Ohm MOSFET Transistor 278-FQP4P40
P-Channel MOSFET, -400V, -3.5A, 3.1 Ohm, TO-220 Product overview: FQP4P40 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -400V, -3.5A, 3.1 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -400V, -3.5A, 3.1 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP4P40 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, -400V, -3.5A, 3.1 Ohm, TO-220 Product overview: FQP4P40 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -400V, -3.5A, 3.1 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -400V, -3.5A, 3.1 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP4P40 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP4P40FS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP4P40FS-ND
Single FETs, MOSFETs FQP4P40FS-ND
P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-220-3

P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FQP4P40 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP4P40
Single FETs, MOSFETs FQP4P40
MOSFET P-CH 400V 3.5A TO220-3

MOSFET P-CH 400V 3.5A TO220-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP4P40 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP4P40
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP4P40
MOSFET P-CH 400V 3.5A TO220-3

MOSFET P-CH 400V 3.5A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP4P40
MOSFET FQP4P40
MOSFET 400V P-Channel QFET

MOSFET 400V P-Channel QFET

Buy Now Datasheet
Transistor,mosfet,p-Channel,400V V(Br)Dss,3.5A I(D),to-220 Rohs Compliant Onsemi - 34C0495 - Newark, An Avnet Company
Chicago, IL, United States
Transistor,mosfet,p-Channel,400V V(Br)Dss,3.5A I(D),to-220 Rohs Compliant Onsemi
34C0495
Transistor,mosfet,p-Channel,400V V(Br)Dss,3.5A I(D),to-220 Rohs Compliant Onsemi 34C0495
TRANSISTOR,MOSFET,P- CHANNEL,400V V(BR)DSS,3.5A I(D),TO-220 ROHS COMPLIANT: YES

TRANSISTOR,MOSFET,P-CHANNEL,400V V(BR)DSS,3.5A I(D),TO-220 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204302-FQP4P40 278-FQP4P40 FQP4P40FS-ND FQP4P40 FQP4P40 FQP4P40 34C0495
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4P40 P-Channel -400V -3.5A 3.1 Ohm MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor,mosfet,p-Channel,400V V(Br)Dss,3.5A I(D),to-220 Rohs Compliant Onsemi
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 400 volts 400 volts
PD 85000 milliwatts 85000 milliwatts 85000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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