The FQP4P40 is a P-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V(Br)Dss) of -400V and a continuous drain current (I(D)) rating of -3.5A at a case temperature of 25¬8C. The device is housed in a TO-220 package and is RoHS compliant. It exhibits a maximum on-resistance (RDS(on)) of 3.1,Ѷ at a gate-source voltage (VGS) of -10V and a drain current of -1.75A. The MOSFET is suitable for various applications, including switched mode power supplies, audio amplifiers, and DC motor control. It has a low gate charge of approximately 18nC and is 100% avalanche tested, ensuring reliability in demanding conditions. The operating temperature range is from -55¬8C to +150¬8C, making it versatile for different environments.
P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-220-3
P-Channel MOSFET, -400V, -3.5A, 3.1 Ohm, TO-220 Product overview: FQP4P40 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -400V, -3.5A, 3.1 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -400V, -3.5A, 3.1 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP4P40 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204302-FQP4P40
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 85W (Tc)
Family Name: FQP4P40
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.1 Ohm @ 1.75A, 10V
Introduction Date: September 19, 2000
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
TRANSISTOR,MOSFET,P-
MOSFET P-CH 400V 3.5A TO220-3
MOSFET P-CH 400V 3.5A TO220-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQP4P40FS-ND | 278-FQP4P40 | 204302-FQP4P40 | 34C0495 | FQP4P40 | FQP4P40 | FQP4P40 |
| Product Name | Single FETs, MOSFETs | P-Channel -400V -3.5A 3.1 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4P40 | Transistor,mosfet,p-Channel,400V V(Br)Dss,3.5A I(D),to-220 Rohs Compliant Onsemi | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | ||
| PD | 85000 milliwatts | 85000 milliwatts | 85000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
