900V 4A N-Channel Power MOSFET TO-220 4.2R Product overview: FQP4N90C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 4A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 4A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP4N90C can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067434-FQP4N90C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: FQP4N90C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 960pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.2 Ohm @ 2A, 10V
Alternative Parts (Cross-Reference): STP3NB90; STP3NA90; STP3HNK90Z; KHB3D0N90P1;
Introduction Date: June 26, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N-Channel 900V 4A (Tc) 140W (Tc) Through Hole TO-220-3
900V 4A 140W 4.2Ω@10V,2A 5V@250uA N Channel TO-220 MOSFETs ROHS
MOSFET N-CH 900V 4A TO220-3
MOSFET 900V N-Ch Q-FET advance C-Series
MOSFET, N-CH, 900V, 4A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
DISCONTINUED BY MANUFACTURER, MOSFET, QFET SERIES, N-CHANNEL, 900 VDSS, 4A (TC), 140W (TC), THROUGH HOLE MOUNT, TO-220-3 PACKAGE. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 900V 4A TO220-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FQP4N90C | 067434-FQP4N90C | FQP4N90C-ND | FQP4N90C | FQP4N90C | FQP4N90C | 31Y1553 | 40222020 | FQP4N90C |
| Product Name | N-Channel 900V 4A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4N90C | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 900V, 4A, To-220Ab-3; Channel Type Onsemi | Transistor | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 140000 milliwatts | 140000 milliwatts | 140000 milliwatts | 140000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 900 volts | 900 volts | 900 volts | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220 | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 |
