onsemi Single FETs, MOSFETs FQP4N20L

Description
N-Channel 200V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 200V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP4N20L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP4N20L-ND
Single FETs, MOSFETs FQP4N20L-ND
N-Channel 200V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3

N-Channel 200V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4N20L - 040350-FQP4N20L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4N20L
040350-FQP4N20L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4N20L 040350-FQP4N20L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040350-FQP4N20L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 5.2nC @ 5V Max Input Capacitance: 310pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.35 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040350-FQP4N20L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 5.2nC @ 5V
Max Input Capacitance: 310pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.35 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
MOSFET Transistor 278-FQP4N20L
POWER FIELD-EFFECT TRANSISTOR, 3 Product overview: FQP4N20L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP4N20L can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 3 Product overview: FQP4N20L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP4N20L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP4N20L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP4N20L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP4N20L
MOSFET N-CH 200V 3.8A TO220-3

MOSFET N-CH 200V 3.8A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP4N20L
MOSFET FQP4N20L
MOSFET 200V N-Ch QFET Logic Level

MOSFET 200V N-Ch QFET Logic Level

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQP4N20L-ND 040350-FQP4N20L 278-FQP4N20L FQP4N20L FQP4N20L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP4N20L MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB Bulk TO-220; TO-220-3
V(BR)DSS 200 volts
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