onsemi Single FETs, MOSFETs FQP4N20

N-Channel 200V 3.6A (Tc) 45W (Tc) Through Hole TO-220-3

MOSFET N-CH 200V 3.6A TO-220 Product overview: FQP4N20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3.6A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.6A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP4N20 can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1175431-FQP4N20
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 45W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 3.6A
Rds On (Maximum) at Id, Vgs: 1.4Ohm at 1.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 6.5nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 220pF at 25V