Manufacturer: Fairchild/ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 996518-FQP45N03L
Mounting: SMD (SMT)
Power Dissipation: 53 W
Resistance: 18 mΩ
Rise Time: 60 ns
Fall Time: 30 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220AB
Popularity: Low
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 41 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 25 ns
Drain to Source Resistance: 18 mΩ
Gate to Source Voltage (Vgs): 16 V
Power Field-Effect Transistor, 41A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,... Product overview: FQP45N03L from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 41A, 30V, 0.018ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 41A, 30V, 0.018ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQP45N03L can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 996518-FQP45N03L | 285-FQP45N03L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP45N03L | N-Channel 41A 30V 0.018ohm MOSFET Transistor |
| Package Type | TO-220; SOT3; TO-220AB |