onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3P20 FQP3P20

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039850-FQP3P20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3P20 - 1039850-FQP3P20 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP3P20-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3P20 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, 200V, 2.8A, 150Deg C, 52W; Channel Type Onsemi - 84Y9968 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039850-FQP3P20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3P20 - 1039850-FQP3P20 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3P20
1039850-FQP3P20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3P20 1039850-FQP3P20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039850-FQP3P20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039850-FQP3P20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP3P20-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP3P20-ND
Single FETs, MOSFETs FQP3P20-ND
P-Channel 200V 2.8A (Tc) 52W (Tc) Through Hole TO-220-3

P-Channel 200V 2.8A (Tc) 52W (Tc) Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
P-Channel -200V 2.8A TO-220 MOSFET Transistor
278-FQP3P20
P-Channel -200V 2.8A TO-220 MOSFET Transistor 278-FQP3P20
P-Channel MOSFET, -200V, 2.8A, 2.7R, TO-220 Product overview: FQP3P20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -200V, 2.8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, 2.8A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP3P20 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, -200V, 2.8A, 2.7R, TO-220 Product overview: FQP3P20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -200V, 2.8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, 2.8A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP3P20 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3P20 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP3P20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP3P20
MOSFET P-CH 200V 2.8A TO220-3

MOSFET P-CH 200V 2.8A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP3P20
MOSFET FQP3P20
MOSFET 200V P-Channel QFET

MOSFET 200V P-Channel QFET

Buy Now Datasheet
Mosfet, P-Ch, 200V, 2.8A, 150Deg C, 52W; Channel Type Onsemi - 84Y9968 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 200V, 2.8A, 150Deg C, 52W; Channel Type Onsemi
84Y9968
Mosfet, P-Ch, 200V, 2.8A, 150Deg C, 52W; Channel Type Onsemi 84Y9968
MOSFET, P-CH, 200V, 2.8A, 150DEG C, 52W; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, P-CH, 200V, 2.8A, 150DEG C, 52W; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039850-FQP3P20 FQP3P20-ND 278-FQP3P20 FQP3P20 FQP3P20 84Y9968
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3P20 Single FETs, MOSFETs P-Channel -200V 2.8A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, 200V, 2.8A, 150Deg C, 52W; Channel Type Onsemi
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 200 volts
PD 52000 milliwatts 52000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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