onsemi Single FETs, MOSFETs FQP3N60C

Description
N-Channel 600V 3A (Tc) 75W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 600V 3A (Tc) 75W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP3N60CFS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP3N60CFS-ND
Single FETs, MOSFETs FQP3N60CFS-ND
N-Channel 600V 3A (Tc) 75W (Tc) Through Hole TO-220-3

N-Channel 600V 3A (Tc) 75W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-FQP3N60C
MOSFET Transistor 278-FQP3N60C
POWER FIELD-EFFECT TRANSISTOR, 3 Product overview: FQP3N60C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP3N60C can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 3 Product overview: FQP3N60C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP3N60C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N60C - 1039848-FQP3N60C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N60C
1039848-FQP3N60C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N60C 1039848-FQP3N60C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039848-FQP3N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 565pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.4 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039848-FQP3N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 565pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.4 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP3N60C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP3N60C
Single FETs, MOSFETs FQP3N60C
POWER FIELD-EFFECT TRANSISTOR, 3

POWER FIELD-EFFECT TRANSISTOR, 3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP3N60C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP3N60C
Single FETs, MOSFETs FQP3N60C
MOSFET N-CH 600V 3A TO220-3

MOSFET N-CH 600V 3A TO220-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3N60C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP3N60C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP3N60C
MOSFET N-CH 600V 3A TO220-3

MOSFET N-CH 600V 3A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP3N60C
MOSFET FQP3N60C
MOSFET N-CH/600V 3A/3.6OHM

MOSFET N-CH/600V 3A/3.6OHM

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQP3N60CFS-ND 278-FQP3N60C 1039848-FQP3N60C FQP3N60C FQP3N60C FQP3N60C
Product Name Single FETs, MOSFETs MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N60C Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Bulk TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3
PD 75000 milliwatts 75000 milliwatts 75000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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