onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 FQP3N30

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067429-FQP3N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 - 067429-FQP3N30 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP3N30 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQP3N30-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3N30 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi - 84Y9967 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067429-FQP3N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 - 067429-FQP3N30 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30
067429-FQP3N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 067429-FQP3N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067429-FQP3N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067429-FQP3N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 3.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP3N30 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP3N30
Single FETs, MOSFETs FQP3N30
POWER FIELD-EFFECT TRANSISTOR, 3

POWER FIELD-EFFECT TRANSISTOR, 3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP3N30-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP3N30-ND
Single FETs, MOSFETs FQP3N30-ND
N-Channel 300V 3.2A (Tc) 55W (Tc) Through Hole TO-220-3

N-Channel 300V 3.2A (Tc) 55W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3N30 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP3N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP3N30
MOSFET N-CH 300V 3.2A TO220-3

MOSFET N-CH 300V 3.2A TO220-3

Supplier's Site
Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi - 84Y9967 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi
84Y9967
Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi 84Y9967
MOSFET, N-CH, 300V, 3.2A, 150DEG C, 55W; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:3.2A; On Resistance Rds(on):1.65ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 3.2A, 150DEG C, 55W; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:3.2A; On Resistance Rds(on):1.65ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP3N30
MOSFET FQP3N30
MOSFET 300V N-Channel QFET

MOSFET 300V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067429-FQP3N30 FQP3N30 FQP3N30-ND FQP3N30 84Y9967 FQP3N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts 300 volts
PD 55000 milliwatts 55000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3
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