N-Channel 300V 3.2A (Tc) 55W (Tc) Through Hole TO-220-3
N-Channel MOSFET, 300V, 3.2A, 2.2 Ohm, TO-220 Product overview: FQP3N30 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 300V, 3.2A, 2.2 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 3.2A, 2.2 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP3N30 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067429-FQP3N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 3.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
POWER FIELD-EFFECT TRANSISTOR, 3
MOSFET, N-CH, 300V, 3.2A, 150DEG C, 55W; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:3.2A; On Resistance Rds(on):1.65ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 300V 3.2A TO220-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP3N30-ND | 278-FQP3N30 | 067429-FQP3N30 | FQP3N30 | 84Y9967 | FQP3N30 | FQP3N30 |
| Product Name | Single FETs, MOSFETs | N-Channel 300V 3.2A 2.2 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 | Single FETs, MOSFETs | Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 | ||
| PD | 55000 milliwatts | 55000 milliwatts | 55000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 300 volts | 300 volts |
