onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 FQP3N30

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067429-FQP3N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 - 067429-FQP3N30 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP3N30-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQP3N30 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3N30 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi - 84Y9967 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067429-FQP3N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 - 067429-FQP3N30 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30
067429-FQP3N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 067429-FQP3N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067429-FQP3N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067429-FQP3N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 3.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP3N30-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP3N30-ND
Single FETs, MOSFETs FQP3N30-ND
N-Channel 300V 3.2A (Tc) 55W (Tc) Through Hole TO-220-3

N-Channel 300V 3.2A (Tc) 55W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FQP3N30 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP3N30
Single FETs, MOSFETs FQP3N30
POWER FIELD-EFFECT TRANSISTOR, 3

POWER FIELD-EFFECT TRANSISTOR, 3

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP3N30
MOSFET FQP3N30
MOSFET 300V N-Channel QFET

MOSFET 300V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3N30 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP3N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP3N30
MOSFET N-CH 300V 3.2A TO220-3

MOSFET N-CH 300V 3.2A TO220-3

Supplier's Site
Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi - 84Y9967 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi
84Y9967
Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi 84Y9967
MOSFET, N-CH, 300V, 3.2A, 150DEG C, 55W; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:3.2A; On Resistance Rds(on):1.65ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 3.2A, 150DEG C, 55W; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:3.2A; On Resistance Rds(on):1.65ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067429-FQP3N30 FQP3N30-ND FQP3N30 FQP3N30 FQP3N30 84Y9967
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N30 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 300V, 3.2A, 150Deg C, 55W; Transistor Polarity Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 300 volts 300 volts
PD 55000 milliwatts 55000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3
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