onsemi Single FETs, MOSFETs FQP3N25

Description
N-Channel 250V 2.8A (Tc) 45W (Tc) Through Hole TO-220-3
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Description
N-Channel 250V 2.8A (Tc) 45W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FQP3N25-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP3N25-ND
Single FETs, MOSFETs FQP3N25-ND
N-Channel 250V 2.8A (Tc) 45W (Tc) Through Hole TO-220-3

N-Channel 250V 2.8A (Tc) 45W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N25 - 1039847-FQP3N25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N25
1039847-FQP3N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N25 1039847-FQP3N25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039847-FQP3N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 5.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039847-FQP3N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 5.2nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP3N25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP3N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP3N25
MOSFET N-CH 250V 2.8A TO220-3

MOSFET N-CH 250V 2.8A TO220-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP3N25-ND 1039847-FQP3N25 FQP3N25
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N25 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 250 volts
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