N-Channel 200V 31A (Tc) 180W (Tc) Through Hole TO-220-3
MOSFET N-CH 200V 31A TO220-3
MOSFETs 200V N-Channel QFET Product overview: FQP34N20 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP34N20 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016454-FQP34N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Family Name: FQP34N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 3100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 75 mOhm @ 15.5A, 10V
Alternative Parts (Cross-Reference): IXTP32N20T; IRFB23N20D; STP30NF20;
Introduction Date: May 16, 2000
ECCN: EAR99
Country of Origin: China, Japan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N CHANNEL MOSFET, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 200V 31A TO220-3
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP34N20-ND | FQP34N20 | 2088-FQP34N20 | 016454-FQP34N20 | 58K1525 | FQP34N20 | FQP34N20 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 200V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP34N20 | N Channel Mosfet, 200V, 31A, To-220; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-220; TO-220-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| IDSS | 31000 milliamps | 31000 milliamps |