onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP33N10 FQP33N10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016453-FQP33N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP33N10 - 016453-FQP33N10 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP33N10 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQP33N10-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP33N10 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 33 A, 100 V, 52 Mohm, 10 V, 4 V Rohs Compliant Onsemi - 97K0180 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor - 16125696 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016453-FQP33N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP33N10 - 016453-FQP33N10 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP33N10
016453-FQP33N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP33N10 016453-FQP33N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016453-FQP33N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016453-FQP33N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 127W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 100V 33A TO-220 MOSFET Transistor
278-FQP33N10
N-Channel 100V 33A TO-220 MOSFET Transistor 278-FQP33N10
N-Channel Power MOSFET, 100V, 33A, 52mR, TO-220 Product overview: FQP33N10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 33A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP33N10 can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET, 100V, 33A, 52mR, TO-220 Product overview: FQP33N10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 33A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP33N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP33N10 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP33N10
Single FETs, MOSFETs FQP33N10
MOSFET N-CH 100V 33A TO220-3

MOSFET N-CH 100V 33A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP33N10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP33N10-ND
Single FETs, MOSFETs FQP33N10-ND
N-Channel 100V 33A (Tc) 127W (Tc) Through Hole TO-220-3

N-Channel 100V 33A (Tc) 127W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP33N10 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP33N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP33N10
MOSFET N-CH 100V 33A TO220-3

MOSFET N-CH 100V 33A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP33N10
MOSFET FQP33N10
MOSFET 100V N-Channel QFET

MOSFET 100V N-Channel QFET

Buy Now Datasheet
Mosfet Transistor, N Channel, 33 A, 100 V, 52 Mohm, 10 V, 4 V Rohs Compliant Onsemi - 97K0180 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 33 A, 100 V, 52 Mohm, 10 V, 4 V Rohs Compliant Onsemi
97K0180
Mosfet Transistor, N Channel, 33 A, 100 V, 52 Mohm, 10 V, 4 V Rohs Compliant Onsemi 97K0180
MOSFET Transistor, N Channel, 33 A, 100 V, 52 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 33 A, 100 V, 52 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 16125696 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16125696
Transistor 16125696
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 33A, 100V, 0.052OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 33A, 100V, 0.052OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016453-FQP33N10 278-FQP33N10 FQP33N10 FQP33N10-ND FQP33N10 FQP33N10 97K0180 16125696
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP33N10 N-Channel 100V 33A TO-220 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 33 A, 100 V, 52 Mohm, 10 V, 4 V Rohs Compliant Onsemi Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 127000 milliwatts 127000 milliwatts 127000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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