Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016452-FQP32N20C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 82 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 200V 28A (Tc) 156W (Tc) Through Hole TO-220-3
MOSFETs 200V N-Channel Advance Q-FET Product overview: FQP32N20C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP32N20C can be used for catalog matching and distributor lookup.
MOSFET 200V N-Channel Advance Q-FET
MOSFET, N-CH, 200V, 28A, 156W, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 200V 28A TO220-3
TRANSISTOR,MOSFET,N-
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 016452-FQP32N20C | FQP32N20CFS-ND | 2088-FQP32N20C | FQP32N20C | 99AC9205 | FQP32N20C | 49272432 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP32N20C | Single FETs, MOSFETs | N-Channel 200V MOSFET Transistor | MOSFET | Mosfet, N-Ch, 200V, 28A, 156W, To-220; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 200 volts | ||||||
| PD | 156000 milliwatts | 156 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-3; TO-220 | TO-220; TO-220-3 |