onsemi Single FETs, MOSFETs FQP32N12V2

Description
N-Channel 120V 32A (Tc) 150W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 120V 32A (Tc) 150W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP32N12V2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP32N12V2-ND
Single FETs, MOSFETs FQP32N12V2-ND
N-Channel 120V 32A (Tc) 150W (Tc) Through Hole TO-220-3

N-Channel 120V 32A (Tc) 150W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP32N12V2 - 1039843-FQP32N12V2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP32N12V2
1039843-FQP32N12V2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP32N12V2 1039843-FQP32N12V2
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039843-FQP32N12V2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 120V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 1860pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039843-FQP32N12V2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 120V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1860pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 50 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP32N12V2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP32N12V2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP32N12V2
MOSFET N-CH 120V 32A TO220-3

MOSFET N-CH 120V 32A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP32N12V2-ND 1039843-FQP32N12V2 FQP32N12V2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP32N12V2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 120 volts
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