onsemi FETs - Single - FQP2P40 FQP2P40

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175427-FQP2P40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 63W Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 2A Rds On (Maximum) at Id, Vgs: 6.5Ohm at 1A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V
  • FETs - Single - FQP2P40 - 1175427-FQP2P40 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP2P40-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP2P40 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175427-FQP2P40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 63W Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 2A Rds On (Maximum) at Id, Vgs: 6.5Ohm at 1A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQP2P40 - 1175427-FQP2P40 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQP2P40
1175427-FQP2P40
FETs - Single - FQP2P40 1175427-FQP2P40
Manufacturer: ON Semiconductor Win Source Part Number: 1175427-FQP2P40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 63W Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 2A Rds On (Maximum) at Id, Vgs: 6.5Ohm at 1A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175427-FQP2P40
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 63W
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 2A
Rds On (Maximum) at Id, Vgs: 6.5Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V

Buy Now
Single FETs, MOSFETs - FQP2P40-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP2P40-ND
Single FETs, MOSFETs FQP2P40-ND
P-Channel 400V 2A (Tc) 63W (Tc) Through Hole TO-220-3

P-Channel 400V 2A (Tc) 63W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP2P40 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP2P40
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP2P40
MOSFET P-CH 400V 2A TO220-3

MOSFET P-CH 400V 2A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1175427-FQP2P40 FQP2P40-ND FQP2P40
Product Name FETs - Single - FQP2P40 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 400 volts
PD 63000 milliwatts
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