Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067427-FQP2N90
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7.2 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 900V 2.2A TO220-3
MOSFETs 900V N-Channel QFET Product overview: FQP2N90 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP2N90 can be used for catalog matching and distributor lookup.
N-Channel 900V 2.2A (Tc) 85W (Tc) Through Hole TO-220-3
MOSFET N-CH 900V 2.2A TO220-3
MOSFET, N CH, 900V, 2.2A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 2.2A I(D), 900V, 7.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 067427-FQP2N90 | FQP2N90 | 2088-FQP2N90 | FQP2N90FS-ND | FQP2N90 | 31Y1548 | 74195175 | FQP2N90 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N90 | Single FETs, MOSFETs | N-Channel 900V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 900V, 2.2A, To-220Ab-3; Channel Type Onsemi | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 900 volts | 900 volts | ||||||
| PD | 85000 milliwatts | 85000 milliwatts | 85 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 |
