MOSFET N-CH 900V 2.2A TO220-3
N-Channel 900V 2.2A (Tc) 85W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067427-FQP2N90
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7.2 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET, N CH, 900V, 2.2A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 900V 2.2A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 2.2A I(D), 900V, 7.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | FQP2N90 | FQP2N90FS-ND | 067427-FQP2N90 | 31Y1548 | FQP2N90 | FQP2N90 | 74195175 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N90 | Mosfet, N Ch, 900V, 2.2A, To-220Ab-3; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 900 volts | 900 volts | |||||
| IDSS | 2200 milliamps | 2200 milliamps |
