onsemi Single FETs, MOSFETs FQP2N80

Description
N-Channel 800V 2.4A (Tc) 85W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 800V 2.4A (Tc) 85W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP2N80-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP2N80-ND
Single FETs, MOSFETs FQP2N80-ND
N-Channel 800V 2.4A (Tc) 85W (Tc) Through Hole TO-220-3

N-Channel 800V 2.4A (Tc) 85W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
800V 2.4A MOSFET Transistor
278-FQP2N80
800V 2.4A MOSFET Transistor 278-FQP2N80
800V N-CH MOSFET, 2.4A, 6.3R, TO-220AB Product overview: FQP2N80 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP2N80 can be used for catalog matching and distributor lookup.

800V N-CH MOSFET, 2.4A, 6.3R, TO-220AB Product overview: FQP2N80 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP2N80 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N80 - 067426-FQP2N80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N80
067426-FQP2N80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N80 067426-FQP2N80
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067426-FQP2N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067426-FQP2N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.3 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP2N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP2N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP2N80
MOSFET N-CH 800V 2.4A TO220-3

MOSFET N-CH 800V 2.4A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP2N80
MOSFET FQP2N80
MOSFET 800V N-Channel QFET

MOSFET 800V N-Channel QFET

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQP2N80-ND 278-FQP2N80 067426-FQP2N80 FQP2N80 FQP2N80
Product Name Single FETs, MOSFETs 800V 2.4A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N80 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
PD 85000 milliwatts 85000 milliwatts
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