onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N60C FQP2N60C

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067425-FQP2N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: FQP2N60C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): STP2HNC60; TSM2N60CZ; TSM2N60CZ C0; TSM2NB60CZ C0G;
Introduction Date: September 02, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

N-Channel 600V 2A (Tc) 54W (Tc) Through Hole TO-220-3

POWER FIELD-EFFECT TRANSISTOR, 2

MOSFET N-CH 600V 2A TO220-3