onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N60C FQP2N60C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067425-FQP2N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 54W (Tc) Family Name: FQP2N60C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V Alternative Parts (Cross-Reference): STP2HNC60; TSM2N60CZ; TSM2N60CZ C0; TSM2NB60CZ C0G; Introduction Date: September 02, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067425-FQP2N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 54W (Tc) Family Name: FQP2N60C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V Alternative Parts (Cross-Reference): STP2HNC60; TSM2N60CZ; TSM2N60CZ C0; TSM2NB60CZ C0G; Introduction Date: September 02, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N60C - 067425-FQP2N60C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N60C
067425-FQP2N60C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N60C 067425-FQP2N60C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067425-FQP2N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 54W (Tc) Family Name: FQP2N60C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V Alternative Parts (Cross-Reference): STP2HNC60; TSM2N60CZ; TSM2N60CZ C0; TSM2NB60CZ C0G; Introduction Date: September 02, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067425-FQP2N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: FQP2N60C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): STP2HNC60; TSM2N60CZ; TSM2N60CZ C0; TSM2NB60CZ C0G;
Introduction Date: September 02, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP2N60CFS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP2N60CFS-ND
Single FETs, MOSFETs FQP2N60CFS-ND
N-Channel 600V 2A (Tc) 54W (Tc) Through Hole TO-220-3

N-Channel 600V 2A (Tc) 54W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FQP2N60C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP2N60C
Single FETs, MOSFETs FQP2N60C
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP2N60C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP2N60C
Single FETs, MOSFETs FQP2N60C
MOSFET N-CH 600V 2A TO220-3

MOSFET N-CH 600V 2A TO220-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP2N60C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP2N60C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP2N60C
MOSFET N-CH 600V 2A TO220-3

MOSFET N-CH 600V 2A TO220-3

Supplier's Site
Mosfet, N Channel, 600V, 2A, To-220-3; Channel Type Onsemi - 97K0171 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 2A, To-220-3; Channel Type Onsemi
97K0171
Mosfet, N Channel, 600V, 2A, To-220-3; Channel Type Onsemi 97K0171
MOSFET, N CHANNEL, 600V, 2A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 2A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP2N60C
MOSFET FQP2N60C
MOSFET 600V N-Channel Advance Q-FET

MOSFET 600V N-Channel Advance Q-FET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067425-FQP2N60C FQP2N60CFS-ND FQP2N60C FQP2N60C FQP2N60C 97K0171 FQP2N60C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP2N60C Single FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 600V, 2A, To-220-3; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 54000 milliwatts 54000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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