onsemi Single FETs, MOSFETs FQP22P10

Description
P-Channel 100V 22A (Tc) 125W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
P-Channel 100V 22A (Tc) 125W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP22P10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP22P10-ND
Single FETs, MOSFETs FQP22P10-ND
P-Channel 100V 22A (Tc) 125W (Tc) Through Hole TO-220-3

P-Channel 100V 22A (Tc) 125W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22P10 - 1039836-FQP22P10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22P10
1039836-FQP22P10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22P10 1039836-FQP22P10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039836-FQP22P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 125 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IRF9540NPBF; TSM22P10CZ C0G; FQP22P10_NL; FQP22P10; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039836-FQP22P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 125 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRF9540NPBF; TSM22P10CZ C0G; FQP22P10_NL; FQP22P10;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
100V 22A TO-220 MOSFET Transistor
278-FQP22P10
100V 22A TO-220 MOSFET Transistor 278-FQP22P10
MOSFET P-CH 100V 22A TO-220 Product overview: FQP22P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 22A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 22A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP22P10 can be used for catalog matching and distributor lookup.

MOSFET P-CH 100V 22A TO-220 Product overview: FQP22P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 22A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 22A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP22P10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP22P10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP22P10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP22P10
MOSFET P-CH 100V 22A TO220-3

MOSFET P-CH 100V 22A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP22P10-ND 1039836-FQP22P10 278-FQP22P10 FQP22P10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22P10 100V 22A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 100 volts
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