onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N20C FQP19N20C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016451-FQP19N20C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 139W (Tc) Family Name: FQP19N20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 170 mOhm @ 9.5A, 10V Alternative Parts (Cross-Reference): PHP18N20E; IRF640; STP19NB20; Introduction Date: March 01, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N20C - 016451-FQP19N20C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP19N20C - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQP19N20C-ND - DigiKey
    DigiKey
  • Transistor - 16125676 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP19N20C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 200V, 19A, To-220; Channel Type Onsemi - 60J0864 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016451-FQP19N20C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 139W (Tc) Family Name: FQP19N20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 170 mOhm @ 9.5A, 10V Alternative Parts (Cross-Reference): PHP18N20E; IRF640; STP19NB20; Introduction Date: March 01, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N20C - 016451-FQP19N20C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N20C
016451-FQP19N20C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N20C 016451-FQP19N20C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016451-FQP19N20C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 139W (Tc) Family Name: FQP19N20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 170 mOhm @ 9.5A, 10V Alternative Parts (Cross-Reference): PHP18N20E; IRF640; STP19NB20; Introduction Date: March 01, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016451-FQP19N20C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 139W (Tc)
Family Name: FQP19N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 170 mOhm @ 9.5A, 10V
Alternative Parts (Cross-Reference): PHP18N20E; IRF640; STP19NB20;
Introduction Date: March 01, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP19N20C - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP19N20C
Single FETs, MOSFETs FQP19N20C
MOSFET N-CH 200V 19A TO220-3

MOSFET N-CH 200V 19A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP19N20C-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP19N20C-ND
Single FETs, MOSFETs FQP19N20C-ND
N-Channel 200V 19A (Tc) 139W (Tc) Through Hole TO-220-3

N-Channel 200V 19A (Tc) 139W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Transistor - 16125676 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16125676
Transistor 16125676
N CHANNEL MOSFET, 200V, 19A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:19A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.14OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 200V, 19A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:19A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.14OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP19N20C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP19N20C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP19N20C
MOSFET N-CH 200V 19A TO220-3

MOSFET N-CH 200V 19A TO220-3

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FQP19N20C
Triode/MOS Tube/Transistor >> MOSFETs FQP19N20C
200V 19A 139W 170mΩ@10V,9.5A 4V@250uA N Channel TO-220 MOSFETs ROHS

200V 19A 139W 170mΩ@10V,9.5A 4V@250uA N Channel TO-220 MOSFETs ROHS

Supplier's Site Datasheet
N Channel Mosfet, 200V, 19A, To-220; Channel Type Onsemi - 60J0864 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 19A, To-220; Channel Type Onsemi
60J0864
N Channel Mosfet, 200V, 19A, To-220; Channel Type Onsemi 60J0864
N CHANNEL MOSFET, 200V, 19A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 19A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP19N20C
MOSFET FQP19N20C
MOSFET 200V N-Channel Advance Q-FET

MOSFET 200V N-Channel Advance Q-FET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016451-FQP19N20C FQP19N20C FQP19N20C-ND 16125676 FQP19N20C FQP19N20C 60J0864 FQP19N20C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N20C Single FETs, MOSFETs Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs N Channel Mosfet, 200V, 19A, To-220; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts 200 volts
PD 139000 milliwatts 139000 milliwatts 139000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220 TO-3; TO-220
Unlock Full Specs
to access all available technical data