MOSFET N-CH 200V 19A TO220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016451-FQP19N20C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 139W (Tc)
Family Name: FQP19N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 170 mOhm @ 9.5A, 10V
Alternative Parts (Cross-Reference): PHP18N20E; IRF640; STP19NB20;
Introduction Date: March 01, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
200V 19A N-Channel Power MOSFET TO-220 170mR Product overview: FQP19N20C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 19A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 19A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP19N20C can be used for catalog matching and distributor lookup.
N-Channel 200V 19A (Tc) 139W (Tc) Through Hole TO-220-3
N CHANNEL MOSFET, 200V, 19A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:19A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.14OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET 200V N-Channel Advance Q-FET
N CHANNEL MOSFET, 200V, 19A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 200V 19A TO220-3
200V 19A 139W 170mΩ@10V,9.5A 4V@250uA N Channel TO-220 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP19N20C | 016451-FQP19N20C | 278-FQP19N20C | FQP19N20C-ND | 16125676 | FQP19N20C | 60J0864 | FQP19N20C | FQP19N20C |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N20C | N-Channel 200V 19A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Transistor | MOSFET | N Channel Mosfet, 200V, 19A, To-220; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| IDSS | 19000 milliamps | 19000 milliamps | |||||||
| PD | 139000 milliwatts | 139000 milliwatts | 139000 milliwatts | 139000 milliwatts |
