MOSFET P-CH 100V 16.5A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 1
P-Channel 100V 16.5A (Tc) 100W (Tc) Through Hole TO-220-3
MOSFETs 100V P-Channel QFET Product overview: FQP17P10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP17P10 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039827-FQP17P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 16.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
ON SEMICONDUCTOR Semiconductors FQP17P10
MOSFET P-CH 100V 16.5A TO220-3
P CHANNEL MOSFET, -100V, 16.5A, TO-220; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16.5A; On Resistance Rds(on):0.19ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, P Channel, 16.5 A, 100 V, 190 mohm, -10 V, -4 V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP17P10 | FQP17P10-ND | 2088-FQP17P10 | 1039827-FQP17P10 | FQP17P10 | 58K1523 | 97K0166 | FQP17P10 | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP17P10 | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -100V, 16.5A, To-220; Transistor Polarity Onsemi | Mosfet Transistor, P Channel, 16.5 A, 100 V, 190 Mohm, -10 V, -4 V Rohs Compliant Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| IDSS | 16500 milliamps | 16500 milliamps | |||||||
| PD | 100000 milliwatts | 100 milliwatts | 100000 milliwatts |
