onsemi Single FETs, MOSFETs FQP16N25

Description
N-Channel 250V 16A (Tc) 142W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 250V 16A (Tc) 142W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP16N25FS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP16N25FS-ND
Single FETs, MOSFETs FQP16N25FS-ND
N-Channel 250V 16A (Tc) 142W (Tc) Through Hole TO-220-3

N-Channel 250V 16A (Tc) 142W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP16N25 - 016450-FQP16N25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP16N25
016450-FQP16N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP16N25 016450-FQP16N25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016450-FQP16N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 142W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016450-FQP16N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 142W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 230 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP16N25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP16N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP16N25
MOSFET N-CH 250V 16A TO220-3

MOSFET N-CH 250V 16A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP16N25
MOSFET FQP16N25
MOSFET 250V N-Channel QFET

MOSFET 250V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQP16N25FS-ND 016450-FQP16N25 FQP16N25 FQP16N25
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP16N25 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 250 volts
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