onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP14N30 FQP14N30

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039825-FQP14N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 14.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1360pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 7.2A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039825-FQP14N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 14.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1360pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 7.2A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP14N30 - 1039825-FQP14N30 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP14N30
1039825-FQP14N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP14N30 1039825-FQP14N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039825-FQP14N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 14.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1360pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 7.2A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039825-FQP14N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 14.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1360pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 290 mOhm @ 7.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP14N30 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP14N30
Single FETs, MOSFETs FQP14N30
MOSFET N-CH 300V 14.4A TO220-3

MOSFET N-CH 300V 14.4A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP14N30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP14N30-ND
Single FETs, MOSFETs FQP14N30-ND
N-Channel 300V 14.4A (Tc) 147W (Tc) Through Hole TO-220-3

N-Channel 300V 14.4A (Tc) 147W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP14N30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP14N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP14N30
MOSFET N-CH 300V 14.4A TO220-3

MOSFET N-CH 300V 14.4A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP14N30
MOSFET FQP14N30
MOSFET 300V N-Channel QFET

MOSFET 300V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039825-FQP14N30 FQP14N30 FQP14N30-ND FQP14N30 FQP14N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP14N30 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts 300 volts
PD 147000 milliwatts 147000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data