Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 091742-FQP13N50C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 195W (Tc)
Family Name: FQP13N50C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 2055pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 480 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): STP13NK50Z; STP10NB50; STP11N52K3; STP10NC50;
Introduction Date: April 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 500V 13A (Tc) 195W (Tc) Through Hole TO-220-3
MOSFETs 500V N-Ch Q-FET advance C-Series Product overview: FQP13N50C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP13N50C can be used for catalog matching and distributor lookup.
MOSFET 500V N-Ch Q-FET advance C-Series
MOSFET N-CH 500V 13A TO220-3
MOSFET N-CH 500V 13A TO220-3
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 13A I(D), 500V, 0.48OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 091742-FQP13N50C | FQP13N50C-ND | 2088-FQP13N50C | FQP13N50C | FQP13N50C | FQP13N50C | 16125652 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N50C | Single FETs, MOSFETs | 500V MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | |||||
| PD | 195000 milliwatts | 195 milliwatts | 195000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 |
