N-Channel MOSFET, 100V, 12.8A, 180mR, TO-220 Product overview: FQP13N10L from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 12.8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 12.8A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP13N10L can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039823-FQP13N10L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 6.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs
MOSFET N-CH 100V 12.8A TO220-3
N-Channel 100V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3
POWER FIELD-EFFECT TRANSISTOR, 12.8A I(D), 100V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:12.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 100V 12.8A TO220-3
MOSFET 100V N-Ch QFET Logic Level
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FQP13N10L | 1039823-FQP13N10L | FQP13N10L | FQP13N10L-ND | 37082181 | 31Y1546 | FQP13N10L | FQP13N10L |
| Product Name | N-Channel 100V 12.8A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N10L | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | Mosfet, N Ch, 100V, 12.8A, To-220Ab-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 65000 milliwatts | 65000 milliwatts | 65000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| V(BR)DSS | 100 volts | 100 volts |
