N-Channel 60V 13.6A (Tc) 45W (Tc) Through Hole TO-220-3
N-Channel Logic Level MOSFET, 60V, 13.6A, 110mR, TO-220 Product overview: FQP13N06L from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 13.6A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13.6A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP13N06L can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067419-FQP13N06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFET, N CH, 60V, 13.6A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:13.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 60V 13.6A TO220-3
MOSFET 60V N-Channel QFET Logic Level
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP13N06L-ND | 278-FQP13N06L | 067419-FQP13N06L | 31Y1544 | FQP13N06L | FQP13N06L |
| Product Name | Single FETs, MOSFETs | N-Channel 60V 13.6A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N06L | Mosfet, N Ch, 60V, 13.6A, To-220Ab-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | ||
| PD | 45000 milliwatts | 45000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
