onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N06L FQP13N06L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067419-FQP13N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 13.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6.4nC @ 5V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 6.8A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067419-FQP13N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 13.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6.4nC @ 5V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 6.8A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N06L - 067419-FQP13N06L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N06L
067419-FQP13N06L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N06L 067419-FQP13N06L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067419-FQP13N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 13.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6.4nC @ 5V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 6.8A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067419-FQP13N06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP13N06L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP13N06L-ND
Single FETs, MOSFETs FQP13N06L-ND
N-Channel 60V 13.6A (Tc) 45W (Tc) Through Hole TO-220-3

N-Channel 60V 13.6A (Tc) 45W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
N-Channel 60V 13.6A TO-220 MOSFET Transistor
278-FQP13N06L
N-Channel 60V 13.6A TO-220 MOSFET Transistor 278-FQP13N06L
N-Channel Logic Level MOSFET, 60V, 13.6A, 110mR, TO-220 Product overview: FQP13N06L from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 13.6A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13.6A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP13N06L can be used for catalog matching and distributor lookup.

N-Channel Logic Level MOSFET, 60V, 13.6A, 110mR, TO-220 Product overview: FQP13N06L from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 13.6A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13.6A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP13N06L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N Ch, 60V, 13.6A, To-220Ab-3; Channel Type Onsemi - 31Y1544 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 60V, 13.6A, To-220Ab-3; Channel Type Onsemi
31Y1544
Mosfet, N Ch, 60V, 13.6A, To-220Ab-3; Channel Type Onsemi 31Y1544
MOSFET, N CH, 60V, 13.6A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:13.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 60V, 13.6A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:13.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP13N06L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP13N06L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP13N06L
MOSFET N-CH 60V 13.6A TO220-3

MOSFET N-CH 60V 13.6A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V N-Channel QFET Logic Level

MOSFET 60V N-Channel QFET Logic Level

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067419-FQP13N06L FQP13N06L-ND 278-FQP13N06L 31Y1544 FQP13N06L FQP13N06L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N06L Single FETs, MOSFETs N-Channel 60V 13.6A TO-220 MOSFET Transistor Mosfet, N Ch, 60V, 13.6A, To-220Ab-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 45000 milliwatts 45000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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