P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039820-FQP12P20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 470 mOhm @ 5.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs
P-Channel MOSFET, -200V, -11.5A, 470mR, TO-220 Product overview: FQP12P20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -200V, -11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, -11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP12P20 can be used for catalog matching and distributor lookup.
MOSFET P-CH 200V 11.5A TO220-3
MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:120W RoHS Compliant: Yes
MOSFET P-CH 200V 11.5A TO220-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP12P20-ND | 1039820-FQP12P20 | 278-FQP12P20 | FQP12P20 | 97K0163 | FQP12P20 | FQP12P20 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P20 | P-Channel -200V -11.5A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, P, To-220; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | ||
| V(BR)DSS | 200 volts | 200 volts | |||||
| PD | 120000 milliwatts | 120000 milliwatts | 120000 milliwatts | 120000 milliwatts |
