Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039820-FQP12P20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 470 mOhm @ 5.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs
MOSFET P-CH 200V 11.5A TO220-3
P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3
MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:120W RoHS Compliant: Yes
MOSFET P-CH 200V 11.5A TO220-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1039820-FQP12P20 | FQP12P20 | FQP12P20-ND | FQP12P20 | 97K0163 | FQP12P20 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P20 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P, To-220; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | ||||
| PD | 120000 milliwatts | 120000 milliwatts | 120000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
