onsemi Single FETs, MOSFETs FQP12P20

Description
P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP12P20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP12P20-ND
Single FETs, MOSFETs FQP12P20-ND
P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3

P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P20 - 1039820-FQP12P20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P20
1039820-FQP12P20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P20 1039820-FQP12P20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039820-FQP12P20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 470 mOhm @ 5.75A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039820-FQP12P20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 470 mOhm @ 5.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP12P20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP12P20
Single FETs, MOSFETs FQP12P20
MOSFET P-CH 200V 11.5A TO220-3

MOSFET P-CH 200V 11.5A TO220-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FQP12P20
MOSFET FQP12P20
MOSFET 200V P-Channel QFET

MOSFET 200V P-Channel QFET

Buy Now Datasheet
Mosfet, P, To-220; Channel Type Onsemi - 97K0163 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P, To-220; Channel Type Onsemi
97K0163
Mosfet, P, To-220; Channel Type Onsemi 97K0163
MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:120W RoHS Compliant: Yes

MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:120W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP12P20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP12P20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP12P20
MOSFET P-CH 200V 11.5A TO220-3

MOSFET P-CH 200V 11.5A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP12P20-ND 1039820-FQP12P20 FQP12P20 FQP12P20 97K0163 FQP12P20
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P20 Single FETs, MOSFETs MOSFET Mosfet, P, To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 200 volts 200 volts
PD 120000 milliwatts 120000 milliwatts 120000 milliwatts
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