Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067418-FQP12N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2290pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
600V 12A N-Channel Power MOSFET, TO-220, 650mR Rds(on) Product overview: FQP12N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP12N60C can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 12A TO220-3
N-Channel 600V 12A (Tc) 225W (Tc) Through Hole TO-220-3
MOSFET N-CH 600V 12A TO220-3
600V 12A 650mΩ@6A,10V 225W 4V@250uA null TO-220 MOSFETs ROHS
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:225W RoHS Compliant: Yes
MOSFET 600V N-Ch Q-FET advance C-Series
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 067418-FQP12N60C | 278-FQP12N60C | FQP12N60C | FQP12N60C-ND | FQP12N60C | FQP12N60C | 97K0161 | FQP12N60C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12N60C | N-Channel 600V 12A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N, To-220; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | |||||
| PD | 225000 milliwatts | 225000 milliwatts | 225000 milliwatts | 225000 milliwatts | 225000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 |
